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Navitas Semiconductor, Inc.

Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in El Segundo, CA, USA in 2013. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 200 patents among its founders. The proprietary AllGaN™ process design kit monolithically integrates the highest performance GaN FETs with logic and analog circuits. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 25 Navitas patents are granted or pending.

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NV6113-RA Navitas Semiconductor, Inc. - Tape & Reel (TR) Cut Tape (CT) IC PWR GANFAST PWR IC N-CH 8QFN 5.56
NV6115-RA Navitas Semiconductor, Inc. - Tape & Reel (TR) Cut Tape (CT) IC PWR GANFAST PWR IC N-CH 8QFN 7.42
NV6128-RA Navitas Semiconductor, Inc. - Tape & Reel (TR) Cut Tape (CT) FET GANFAST 650V .07OHM 6X8QFN 24.48
NV6123-RA Navitas Semiconductor, Inc. - Tape & Reel (TR) Cut Tape (CT) FET GANFAST 650V .3 OHM 6X8QFN 5.56
NV6125-RA Navitas Semiconductor, Inc. - Tape & Reel (TR) Cut Tape (CT) FET GANFAST 650V .17 OHM 6X8QFN 7.42
NV6127-RA Navitas Semiconductor, Inc. - Tape & Reel (TR) Cut Tape (CT) FET GANFAST 650V .12 OHM 6X8QFN 12.2
NV6117-RA Navitas Semiconductor, Inc. - Tape & Reel (TR) Cut Tape (CT) IC PWR GANFAST PWR IC N-CH 8QFN 12.2
NV6123 Navitas Semiconductor, Inc. - Tape & Reel (TR) IC PWR GANFAST N-CH 6X8 QFN 2.665
NV6113 Navitas Semiconductor, Inc. - Tape & Reel (TR) IC PWR GANFAST N-CH 5X6 8QFN 2.665
NV6115 Navitas Semiconductor, Inc. - Tape & Reel (TR) IC PWR GANFAST N-CH 5X6 8QFN 3.96
NV6125 Navitas Semiconductor, Inc. - Tape & Reel (TR) IC PWR GANFAST N-CH 6X8 QFN 3.96
NV6117 Navitas Semiconductor, Inc. - Tape & Reel (TR) IC PWR GANFAST N-CH 5X6 8QFN 6.505
NV6127 Navitas Semiconductor, Inc. - Tape & Reel (TR) IC PWR GANFAST N-CH 6X8 QFN 6.505
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Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in El Segundo, CA, USA in 2013. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 200 patents among its founders. The proprietary AllGaN™ process design kit monolithically integrates the highest performance GaN FETs with logic and analog circuits. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 25 Navitas patents are granted or pending.
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